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PD - 94676
HEXFET(R) POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA)
IRL7YS1404CM 40V, N-CHANNEL
Product Summary
Part Number
IRL7YS1404CM BVDSS
40V
RDS(on) 0.007
ID 20A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
Low Ohmic TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 20* 80 100 0.8 20 785 20 10 1.8 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRL7YS1404CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
40 -- -- -- 1.0 85 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.04 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5.74 -- -- V V/C
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = VGS, ID = 250A VDS = 10V, IDS = 20A VDS = 40V ,VGS=0V VDS = 32V, VGS = 0V, TJ=125C VGS = 20V VGS = -20V VGS =5.0V, ID = 20A VDS = 32V VDD = 20V, ID = 20A, VGS = 5.0V, RG = 2.5
0.007 0.0085 3.0 V -- S( ) 20 A 250 100 -100 115 35 45 37 180 85 40 --
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
l Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
6470 1600 165 2.86
-- -- -- --
pF
Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz f = 0.78MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 20* 80 1.3 90 200
Test Conditions
A
V ns nC Tj = 25C, IS = 20A, VGS = 0V Tj = 25C, IF = 20A, di/dt 100A/s VDD 25V
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.25
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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IRL7YS1404CM
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
1000
100
VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
3.0V 10
10 3.0V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current ( )
T J = 25C 100 T J = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
1000
2.0
ID = 20A
1.5
1.0
10
0.5
1 3 3.5 4
VDS = 20V 15 60s PULSE WIDTH 4.5 5 5.5 6
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL7YS1404CM
10000
8000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 20A
16
VDS = 32V VDS = 20V VDS = 8V
C, Capacitance (pF)
Ciss
6000
12
4000
C oss
8
2000
4
C rss
0 1 10 100 0 0 50 100
FOR TEST CIRCUIT SEE FIGURE 13
150 200 250
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current ( )
ID, Drain-to-Source Current (A)
100
T J = 150C
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100s 1ms
10
T J = 25C
10 Tc = 25C Tj = 150C Single Pulse 0 1 10
1 VGS = 0V 0.2 0.6 1.0 1.4 1.8 2.2
10ms
0.1
1
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRL7YS1404CM
100
LIMITED BY PACKAGE
80
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
-V DD
60
VGS
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1
PDM t1 t2
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL7YS1404CM
2500
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
2000
ID 9.0A 12.6A BOTTOM 20A TOP
VD S
L
D R IV E R
1500
RG
D .U .T.
IA S
+ V - DD
A
1000
VGS 20V
tp
0 .0 1
500
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
0 25 50 75 100 125 150
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL7YS1404CM
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 3.9mH Peak IAS = 20A, VGS =10V, RG= 25
ISD 20A, di/dt 175A/s, Pulse width 300 s; Duty Cycle 2%
VDD 40V, TJ 150C
Case Outline and Dimensions -- Low-ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3.81 [.150] 3X O 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA.
P IN AS S IGNME NT S
1 = DRAIN 2 = S OURCE 3 = GAT E
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/03
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